Intel and Micron to Deliver 25 mm Portable Flash Memory

By Dipankar Das, Gaea News Network
Sunday, August 22, 2010

nand Intel and Micron announced first 3-bit-per-cell NAND flash memory chip on 25 nanometer process technology. Also known as Triple Level Cell, the 8 GB device offers improved cost efficiencies and higher storage capacities for USB, SD flash card and consumer electronics markets. The new 64-gigabit (Gb) 3bpc on 25nm memory device offers cost effectiveness and better storage capability for USB, SD card. Digital Camera, portable media players etc use flash memory to store Data, Photo and other Multimedia applications.

The technology is developed by IM Flash technology NANd Flash joint venture.The 64-Gb, or 8 gigabyte (GB), 25nm lithography stores three bits of information per cell (TLC) compared to the traditional one bit (single-level cell) or two bits (multi-level cell). The device is more than 20 percent smaller than  Intel and Micron’s 25nm MLC, which is currently available in the market as the smallest single 8GB storage. Brian Shirley, vice president of Micron’s NAND Solutions Group added that since, there is a strong demand for NAND technology in consumer electronics product, the early adoption of TLC on NAND memory gives significant edge in the growing market of NAND memory products. He continued that they are already working to incorporate 8GB TLC NAND flash in end-product designs, including higher-capacity products from Lexar Media and Micron.

“With January’s introduction of the industry’s smallest die size at 25nm, quickly followed by the move to 3-bit-per-cell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products,” said Tom Rampone, Intel vice president and general manager of Intel NAND Solutions Group. “Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB TLC 25nm NAND device.”

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